SILICON-SILICON DIOXIDE INTERFACE - AN INFRARED STUDY

被引：97

作者：

BOYD, IW ^{[1
]}

WILSON, JIB ^{[1
]}

机构：

[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3195 / 3200

页数：6

相关论文

共 37 条

[1] VIBRATIONAL SPECTRA OF VITREOUS SILICA GERMANIA AND BERYLLIUM FLUORIDE
BELL, RJ
BIRD, NF
DEAN, P
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (02): : 299 - &
[2] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY
BLANC, J
BUIOCCHI, CJ
ABRAHAMS, MS
HAM, WE
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 120 - 122
[3] STRUCTURE OF ULTRATHIN SILICON DIOXIDE FILMS
BOYD, IW
WILSON, JIB
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 320 - 322
[4] BOYD IW, 1982, J APPL PHYS, V53, P4172
[5] BOYD IW, 1987, P NATO ASI INTERFACE, P409
[6] CHEN NW, 1978, PHYSICS SIO2 ITS INT, P351
[7] ESCA STUDY OF OXIDE AT SI-SIO2 INTERFACE
CLARKE, RA
TAPPING, RL
HOPPER, MA
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1347 - 1350
[8] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE
DISTEFANO, TH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 856 - 859
[9] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS
DOREMUS, RH
[J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196
[10] DRY OXIDATION OF SILICON - A NEW MODEL OF GROWTH INCLUDING RELAXATION OF STRESS BY VISCOUS-FLOW
FARGEIX, A
GHIBAUDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7153 - 7158

← 1 2 3 4 →