OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS

被引：61

作者：

DOREMUS, RH

机构：

[1] Rensselaer Polytechnic Inst,, Materials Engineering Dep, Troy, NY,, USA, Rensselaer Polytechnic Inst, Materials Engineering Dep, Troy, NY, USA

来源：

THIN SOLID FILMS | 1984年 / 122卷 / 03期

关键词：

D O I：

10.1016/0040-6090(84)90046-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：191 / 196

页数：6

共 29 条

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