A REVISED ANALYSIS OF DRY OXIDATION OF SILICON

被引：74

作者：

FARGEIX, A

GHIBAUDO, G

KAMARINOS, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2878 / 2880

页数：3

相关论文

共 11 条

[1] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN
BLANC, J
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426
[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[3] VISCOUS-FLOW OF THERMAL SIO2
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293
[4] STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10
[5] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[6] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY
HOPPER, MA
CLARKE, RA
YOUNG, L
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222
[7] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
IRENE, EA
VANDERMEULEN, YJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384
[8] THE OXIDATION OF SHAPED SILICON SURFACES
MARCUS, RB
SHENG, TT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1278 - 1282
[9] KINETICS AND MECHANISM OF THERMAL OXIDATION OF SILICON WITH SPECIAL EMPHASIS ON IMPURITY EFFECTS
REVESZ, AG
EVANS, RJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 551 - +
[10] O-18 STUDY OF THE THERMAL-OXIDATION OF SILICON IN OXYGEN
ROSENCHER, E
STRABONI, A
RIGO, S
AMSEL, G
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 254 - 256