O-18 STUDY OF THE THERMAL-OXIDATION OF SILICON IN OXYGEN

被引：161

作者：

ROSENCHER, E ^{[1
]}

STRABONI, A ^{[1
]}

RIGO, S ^{[1
]}

AMSEL, G ^{[1
]}

机构：

[1] ECOLE NORM SUPER,GROUPE PHYS SOLIDES,F-75221 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 04期

关键词：

D O I：

10.1063/1.90771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of thermal oxidation of silicon in dry oxygen was studied using 18O as the tracer. SiO2 layers first grown in natural oxygen (1300-3000 Å) were further grown in highly 18O-enriched oxygen for 8.5 h at 930°C. 18O profiling was carried out using the 629-keV narrow resonance in the nuclear reaction 18O(p,α) 15N. The resulting SiO2 films consist of two 18O-rich layers, 7% near the SiO2 surface and 93% near the Si-SiO2 interface, while the bulk 18O concentration is very low. The results suggest that the oxide grows mainly through long-range migration of oxygen, favoring models based on the transport of molecular oxygen.

引用

页码：254 / 256

页数：3

共 15 条

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