Turn-on process in 4H-SiC thyristors

被引：7

作者：

Levinshtein, ME ^{[1
]}

Palmour, JW ^{[1
]}

Rumyanetsev, SL ^{[1
]}

Singh, R ^{[1
]}

机构：

[1] CREE RES INC,DURHAM,NC 27703

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 07期

关键词：

D O I：

10.1109/16.595949

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detailed turn-on measurements of 4H-Silicon Carbide (SLC) npnp thyristors are presented for a wide range of operating conditions. Comparisons with similarly-rated Silicon and Gallium Arsenide thyristors show a superior rise time and pulsed turn-on performance of SIC thyristors. Rise time for a 400 V blocking voltage, 4 V forward drop (2.8 x 10(3) A/cm(2)) SIC thyristor has been found to be of the order of 3-5 ns. Pulsed turn-on measurements show a residual voltage of only 50 V when a current density of 10(5) A/cm(2) (35 A) was achieved in 20 ns.

引用

页码：1177 / 1179

页数：3

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