Frequency doubling and memory effects in the spin Hall effect

被引：22

作者：

Pershin, Yuriy V. ^{[1
,3
]}

Di Ventra, Massimiliano ^{[2
]}

机构：

[1] Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA

[2] Univ Calif San Diego, Dept Phys, San Diego, CA 92093 USA

[3] Univ S Carolina, USC Nanoctr, Columbia, SC 29208 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 15期

基金：

美国国家科学基金会;

关键词：

electron density; magnetoelectronics; oscillations; spin Hall effect; ORIENTATION; GENERATION; ELECTRONS; SYSTEMS;

D O I：

10.1103/PhysRevB.79.153307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse-voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

引用

页数：4

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