Thickness and oxygen pressure dependent structural characteristics of BaTiO3 thin films grown by laser molecular beam epitaxy

被引:108
作者
Zhao, T [1 ]
Chen, F [1 ]
Lu, HB [1 ]
Yang, GZ [1 ]
Chen, ZH [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Lab Opt Phys, Beijing 100080, Peoples R China
关键词
D O I
10.1063/1.373007
中图分类号
O59 [应用物理学];
学科分类号
摘要
A series of BaTiO3 thin films with various thicknesses from 10 to 400 nm were epitaxially grown under various oxygen pressures from 2 x 10(-4) to 12 Pa on SrTiO3 (001) substrates using laser molecular beam epitaxy. Being confirmed by reflection high energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy the epitaxial single crystal BaTiO3 thin films are highly c-axis or a-axis oriented with a root-mean-square surface roughness of 0.14 nm. The observed thickness and oxygen pressure dependent structural characteristics of the BaTiO3 thin films are discussed by taking into account both the misfits in thermal expansion and lattice constants between BaTiO3 films and SrTiO3 substrates, and the effect of the energy of the sputtered particles, which is consistent with the established strain relaxation mechanism. An abnormal expansion of lattice volume of a BaTiO3 unit cell is found and attributed to the effect of oxygen vacancies in the BaTiO3 films. (C) 2000 American Institute of Physics. [S0021-8979(00)03310-7].
引用
收藏
页码:7442 / 7447
页数:6
相关论文
共 25 条
[1]   Dielectric properties of (Ba, Sr)TiO3 thin films and their correlation with oxygen vacancy density [J].
Fukuda, Y ;
Haneda, H ;
Sakaguchi, I ;
Numata, K ;
Aoki, K ;
Nishimura, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B) :L1514-L1516
[2]   Residual strain and crystal structure of BaTiO3-SrTiO3 thin films prepared by metal organic chemical vapor deposition [J].
Funakubo, H ;
Nagano, D ;
Saiki, A ;
Inagaki, Y ;
Shinozaki, K ;
Mizutani, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9B) :5879-5884
[3]   PREPARATION OF FERROELECTRIC BATIO3 THIN-FILMS BY ACTIVATED REACTIVE EVAPORATION [J].
IIJIMA, K ;
TERASHIMA, T ;
YAMAMOTO, K ;
HIRATA, K ;
BANDO, Y .
APPLIED PHYSICS LETTERS, 1990, 56 (06) :527-529
[4]   EPITAXIAL-GROWTH AND THE CRYSTALLOGRAPHIC, DIELECTRIC, AND PYROELECTRIC PROPERTIES OF LANTHANUM-MODIFIED LEAD TITANATE THIN-FILMS [J].
IIJIMA, K ;
TAKAYAMA, R ;
TOMITA, Y ;
UEDA, I .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2914-2919
[5]   DEPOSITION PROFILE OF RF-MAGNETRON-SPUTTERED BATIO(3) THIN-FILMS [J].
LEE, NY ;
SEKINE, T ;
ITO, Y ;
UCHINO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A) :1484-1488
[6]   Asymmetric rocking curve study of the crystal structure orientations for BaTiO3 thin films grown by pulsed laser deposition [J].
Li, CL ;
Cui, DF ;
Zhou, YL ;
Lu, HB ;
Chen, ZH ;
Zhang, DF ;
Wu, F .
APPLIED SURFACE SCIENCE, 1998, 136 (03) :173-177
[7]   MECHANICAL-PROPERTIES OF THIN-FILMS [J].
NIX, WD .
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1989, 20 (11) :2217-2245
[8]   Microscopic study of oxygen-vacancy defects in ferroelectric perovskites [J].
Park, CH ;
Chadi, DJ .
PHYSICAL REVIEW B, 1998, 57 (22) :R13961-R13964
[9]   ELASTIC ENERGY-RELEASE DUE TO DOMAIN FORMATION IN THE STRAINED EPITAXY OF FERROELECTRIC AND FERROELASTIC FILMS [J].
POMPE, W ;
GONG, X ;
SUO, Z ;
SPECK, JS .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6012-6019
[10]  
SCHENCK PK, 1995, FERROELECTRIC THIN F, V4, P527