High-mobility p-type transistor based on a spin-coated metal telluride semiconductor

被引：71

作者：

Mitzi, David B. ^{[1
]}

Copel, Matthew ^{[1
]}

Murray, Conal E. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 18期

关键词：

D O I：

10.1002/adma.200600157

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A crystalline CuInTe2 film is used as the channel layer in a thin-film field-effect transistor (see figure) yielding field-effect mobilities of over 10 cm2 V-1 s-1, which is approximately an order of magnitude better than previous results for spin-coated p-type systems. A novel three-component hydrazine-based solution is employed to achieve spin coating of the CuInTe2 film.

引用

页码：2448 / +

页数：6

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