Oxygen impurity doping into ultrapure hydrogenated microcrystalline Si films

被引：27

作者：

Kamei, T ^{[1
]}

Wada, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 04期

关键词：

D O I：

10.1063/1.1767609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have systematically performed oxygen impurity doping into ultrapure hydrogenated microcrystalline Si (muc-Si:H) films grown at similar to200degreesC where the lowest spin densities are obtained. Two threshold oxygen concentrations [O] were observed: no crystallinity deterioration below [O]approximate to1x10(20) cm(-3) and rapid carrier density increase above [O]approximate to1x10(18) cm(-3). In these cases, electron carrier density roughly obeys a 1.4th power law with respect to [O] in the range between these two thresholds, while crystallinity remains almost unchanged. An implication of these results is discussed that includes plausible microscopic structures of oxygen donors and their locations. (C) 2004 American Institute of Physics.

引用

页码：2087 / 2090

页数：4

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