Electronic properties of boron-doped {111}-oriented homoepitaxial diamond layers

被引：10

作者：

Tavares, C. ^{[1
]}

Omnes, F. ^{[1
]}

Pernot, J. ^{[1
]}

Bustarret, E. ^{[1
]}

机构：

[1] CNRS, LEPES, F-38042 Grenoble 9, France

来源：

关键词：

homoepitaxy along {111}; p-type doping; electrical properties characterization; excitons;

D O I：

10.1016/j.diamond.2005.11.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p-type diamond single crystal layers were grown by Microwave Plasma-enhanced Chemical Vapor Deposition (MPCVD) on {111}-oriented lb-type diamond substrates. The variation of the gas-phase boron-to-carbon atomic concentration ratio from 0.1 ppm to 104 ppm led to solid state incorporations of boron ranging from the 8 x 10(15) cm(-3) to 3 x 10(21) cm(-3). Low temperature cathodoluminescence spectra in the bandgap region are shown to yield a reliable estimate of the quality of the layers and of the neutral acceptor concentration up to the metal-insulator transition. Temperature-dependent resistivity and Hall effect measurements allow a discussion of the relevance of the various charge carrier scattering mechanisms. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：582 / 585

页数：4

共 13 条

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