Ultraviolet emission from a diamond pn junction

被引：470

作者：

Koizumi, S

Watanabe, K

Hasegawa, M

Kanda, H

机构：

[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

来源：

SCIENCE | 2001年 / 292卷 / 5523期

关键词：

D O I：

10.1126/science.1060258

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report the realization of an ultraviolet Light-emitting diode with the use of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond Layer and phosphorus-doped n-type diamond Layer grown epitaxially on the {111} surface of single crystalline diamond. The pn junction exhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet Light emission at 235 nanometers was observed and was attributed to free exciton recombination.

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页码：1899 / 1901

页数：3

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