PREPARATION OF OHMIC CONTACTS TO SEMICONDUCTING DIAMOND

被引：70

作者：

PRINS, JF

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1989年 / 22卷 / 10期

关键词：

D O I：

10.1088/0022-3727/22/10/026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1562 / 1564

页数：3

共 13 条

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[9] ACTIVATION OF BORON-DOPANT ATOMS IN ION-IMPLANTED DIAMONDS [J].

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[10] BIPOLAR-TRANSISTOR ACTION IN ION-IMPLANTED DIAMOND [J].

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