Current injection free-exciton recombination emission from synthesized diamond

被引：16

作者：

Horiuchi, K ^{[1
]}

Nakamura, K ^{[1
]}

Yamashita, S ^{[1
]}

机构：

[1] Tokyo Gas Co Ltd, Frontier Technol Res Inst, Tsurumi Ku, Yokohama, Kanagawa 2300045, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 6B期

关键词：

diamond; wide gap semiconductor; UV; current injection; light-emitting device; free exciton; electroluminescence; surface conduction;

D O I：

10.1143/JJAP.39.L604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Emission in the UV region is obtained at room temperature from a current injection light-emitting device composed of high-quality synthesized diamond crystal. The operating wavelength is observed to be as short as 235 nm. The main mechanism for the UV emission is found to be TO-phonon-assisted free-exciton recombination, both in the surface conduction device as well as in the p-type one. Since the exciton plays the role of an intermediate state in the photon emission process even at room temperature, the emission efficiency is expected to be higher than that of other indirect semiconductors.

引用

页码：L604 / L606

页数：3

共 25 条

[1]

CHERENKO RM, 1973, PHYS REV B, V7, P4560

[2]

CLARK CD, 1964, P ROY SOC LOND A MAT, V277, P153

[3] NATURE OF ACCEPTOR CENTRE IN SEMICONDUCTING DIAMOND [J].

COLLINS, AT ;

WILLIAMS, AW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13) :1789-&

[4]

COLLINS AT, 1994, PROPERTIES GROWTH DI, P263

[5] ABSORPTION AND LUMINESCENCE OF EXCITONS AT NEUTRAL DONORS IN GALLIUM PHOSPHIDE [J].

DEAN, PJ .

PHYSICAL REVIEW, 1967, 157 (03) :655-&

[6]

DEAN PJ, 1965, PHYS REV A, V140, P352

[7]

DEAN PJ, 1965, PHYS REV A, V139, P588

[8] ELECTROLUMINESCENT DEVICE MADE OF DIAMOND [J].

FUJIMORI, N ;

NISHIBAYASHI, Y ;

SHIOMI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08) :1728-1730

[9] Photoluminescence characterization of high-purity synthesized diamond [J].

Horiuchi, K ;

Nakamura, K ;

Yamashita, S ;

Kuwata-Gonokami, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B) :L1505-L1507

[10] CATHODOLUMINESCENCE AND ELECTROLUMINESCENCE OF UNDOPED AND BORON-DOPED DIAMOND FORMED BY PLASMA CHEMICAL VAPOR-DEPOSITION [J].

KAWARADA, H ;

YOKOTA, Y ;

MORI, Y ;

NISHIMURA, K ;

HIRAKI, A .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :983-989

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