ELECTROLUMINESCENT DEVICE MADE OF DIAMOND

被引：8

作者：

FUJIMORI, N

NISHIBAYASHI, Y

SHIOMI, H

机构：

[1] Sumitomo Electric Industries Ltd., Itami Research Laboratories, Itami Hyogo, 664, 1-1

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期

关键词：

LIGHT EMISSION; DIAMOND; EPITAXIAL GROWTH; SCHOTTKY JUNCTION; P-TYPE; CATHODOLUMINESCENCE; COLOR CENTER;

D O I：

10.1143/JJAP.30.1728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A diamond light-emitting device was fabricated using boron-doped epitaxial film and a Schottky junction. The emission was white with a spectrum which was quite broad and centered at 530 nm. This spectrum was found to be similar to the spectrum obtained by cathodoluminescence from the boron-doped epitaxial film. The emission is considered to be caused by the injection electroluminescence and the color center named "Band-A" is considered to be the emitted center.

引用

页码：1728 / 1730

页数：3

共 13 条

[1] COLLINS AT, 1989, J PHYS CONDENS MATT, V1, P1029
[2] SOME PROPERTIES OF VISIBLE LUMINESCENCE EXCITED IN DIAMOND BY IRRADIATION IN FUNDAMENTAL ABSORPTION EDGE
DEAN, PJ
MALE, JC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (12) : 1369 - &
[3] BOUND EXCITONS AND DONOR-ACCEPTOR PAIRS IN NATURAL AND SYNTHETIC DIAMOND
DEAN, PJ
[J]. PHYSICAL REVIEW, 1965, 139 (2A): : A588 - &
[4] PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS
FUJIMORI, N
NAKAHATA, H
IMAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05): : 824 - 827
[5] CHARACTERIZATION OF CONDUCTING DIAMOND FILMS
FUJIMORI, N
IMAI, T
DOI, A
[J]. VACUUM, 1986, 36 (1-3) : 99 - 102
[6] KAWARADA H, 1990, MATER RES SOC SYMP P, V162, P195
[7] AB-INITIO CALCULATION OF ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND USING DISCRETE VARIATIONAL METHOD
PAINTER, GS
ELLIS, DE
LUBINSKY, AR
[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3610 - &
[8] ELECTRICAL CHARACTERISTICS OF METAL CONTACTS TO BORON-DOPED DIAMOND EPITAXIAL FILM
SHIOMI, H
NAKAHATA, H
IMAI, T
NISHIBAYASHI, Y
FUJIMORI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (05): : 758 - 762
[9] EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD
SHIOMI, H
TANABE, K
NISHIBAYASHI, Y
FUJIMORI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01): : 34 - 40
[10] FIELD-EFFECT TRANSISTORS USING BORON-DOPED DIAMOND EPITAXIAL-FILMS
SHIOMI, H
NISHIBAYASHI, Y
FUJIMORI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2153 - L2154

← 1 2 →