Semiconductor lasers - Fast, cheap, and very bright

被引：12

作者：

Fasol, G

机构：

[1] Eurotechnology Japan, Shinjuku-ku, Tokyo 160

来源：

SCIENCE | 1997年 / 275卷 / 5302期

关键词：

D O I：

10.1126/science.275.5302.941

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

[No abstract available]

引用

页码：941 / 942

页数：2

共 14 条

[1] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
GOLDSTEIN, L
GLAS, F
MARZIN, JY
CHARASSE, MN
LEROUX, G
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
[2] Novel surface emitting laser diode using photonic band-gap crystal cavity
Hirayama, H
Hamano, T
Aoyagi, Y
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (06) : 791 - 793
[3] SURFACE EMITTING SEMICONDUCTOR-LASERS
IGA, K
KOYAMA, F
KINOSHITA, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) : 1845 - 1855
[4] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001)
Kobayashi, NP
Ramachandran, TR
Chen, P
Madhukar, A
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (23) : 3299 - 3301
[5] GIGABIT-RATE OPTICAL-SIGNAL TRANSMISSION USING VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH LARGE-CORE PLASTIC-CLADDING FIBERS
KOSAKA, H
DUTTA, AK
KURIHARA, K
SUGIMOTO, Y
KASAHARA, K
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (08) : 926 - 928
[6] SELF-ORGANIZED GROWTH OF REGULAR NANOMETER-SCALE INAS DOTS ON GAAS
MOISON, JM
HOUZAY, F
BARTHE, F
LEPRINCE, L
ANDRE, E
VATEL, O
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (02) : 196 - 198
[7] NAKAMURA S, 1997, BLUE LASER DIODE GAN, pCH14
[8] NOETZEL R, 1994, NATURE, V369, P131
[9] Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser
Saito, H
Nishi, K
Ogura, I
Sugou, S
Sugimoto, Y
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3140 - 3142
[10] MATERIALS SCIENCE - VERTICAL LASERS TAKE AIM AT NEW-AND COLORFUL-TARGETS
SERVICE, RF
[J]. SCIENCE, 1995, 267 (5201) : 1093 - 1094

← 1 2 →