Electrical conductivity and thermopower of Cu-SiO2 nanogranular films

被引:11
作者
Chen, W [1 ]
Lin, JJ
Zhang, XX
Shin, HK
Dyck, JS
Uher, C
机构
[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan
[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
[4] Ajou Univ, Dept Mol Sci & Technol, Suwon 442749, South Korea
关键词
D O I
10.1063/1.1493668
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the thermopower S and electrical conductivity sigma in a series of Cu-x(SiO2)(1-x) nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of sigma. A crossover of the temperature dependence from sigmaproportional to rootT to sigmaproportional toT(1/3) is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed. (C) 2002 American Institute of Physics.
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收藏
页码:523 / 525
页数:3
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