Weibull fracture probability for characterisation of the anodic bond process

被引:6
作者
Richard, Å [1 ]
Köhler, J [1 ]
Jonsson, K [1 ]
机构
[1] Uppsala Univ, Angstrom Lab, Angstrom Space Technol Ctr, SE-75121 Uppsala, Sweden
关键词
anodic bonding; Weibull fracture probability;
D O I
10.1016/S0924-4247(01)00835-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Fracture probability and Weibull statistic analysis is introduced as a new method to evaluate the reliability of anodically bonded structures, The method enables comparison of anodic bonding performance for various bonding conditions. Fracture strength for samples bonded at different temperatures have been evaluated and found to agree with previously reported results, The strength of anodic bonds, processed at temperatures between 300 and 450 degreesC, are comparable to silicon fusion bonds annealed at temperatures above 800 degreesC. Shock and ramp bonding are compared regarding their fracture probability. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:304 / 311
页数:8
相关论文
共 20 条
[1]  
[Anonymous], 1959, THEORY PLATES SHELLS
[2]   CHARACTERIZATION OF THE ELECTROSTATIC BONDING OF SILICON AND PYREX GLASS [J].
COZMA, A ;
PUERS, B .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) :98-102
[3]  
Davies D.G.S., 1973, P BRIT CERAMIC SOC, V22, P429
[4]   Experimental evaluation of anodic bonding process based on the Taguchi analysis of interfacial fracture toughness [J].
Go, JS ;
Cho, YH .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 73 (1-2) :52-57
[5]  
Greek S, 1999, SENSOR MATER, V11, P247
[6]  
HAGMAN B, 2000, SOLID STATE ELECT DE, P1
[7]  
Johansson S., 1988, SENS MATER, V3, P143
[8]   Oxygen plasma wafer bonding evaluated by the Weibull fracture probability method [J].
Jonsson, K ;
Köhler, J ;
Hedlund, C ;
Stenmark, L .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2001, 11 (04) :364-370
[9]   Weibull fracture probability for silicon wafer bond evaluation [J].
Köhler, J ;
Jonsson, K ;
Greek, S ;
Stenmark, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) :4683-4687
[10]   BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].
MASZARA, WP ;
GOETZ, G ;
CAVIGLIA, A ;
MCKITTERICK, JB .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :4943-4950