SiO2 as an insulator for SiC devices

被引：39

作者：

Harris, CI ^{[1
]}

Afanas'ev, VV ^{[1
]}

机构：

[1] IND MICROELECT CTR, S-16421 KISTA, STOCKHOLM, SWEDEN

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00041-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ability to form a thermal oxide on SiC is seen as being of key importance in the practical realisation of high power switching devices. To date efforts to reproduce the refined process technology possible in Si has met with limited success in SiC. In this paper we review current understanding of the oxidation technology used in SiC.

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页码：167 / 174

页数：8

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