Preparation and electron field emission properties of nano-diamond films

被引：16

作者：

Wang, SG ^{[1
]}

Zhang, Q ^{[1
]}

Yoon, SF ^{[1
]}

Ahn, J ^{[1
]}

Wang, Q ^{[1
]}

Yang, DJ ^{[1
]}

Zhou, Q ^{[1
]}

Huang, QF ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

MATERIALS LETTERS | 2002年 / 56卷 / 06期

关键词：

MPCVD; nano-diamond film; electron field emission; threshold electric field; nitrogen; electron emitter;

D O I：

10.1016/S0167-577X(02)00645-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nano-diamond films with a mean grain size of 20 nm have been successfully prepared on silicon substrate by microwave plasma chemical vapor deposition (MPCVD) technique using gas mixture of nitrogen-methane-hydrogen. The structure and surface morphology of the. films are examined using X-ray diffraction (XRD), Raman spectroscopy, field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Field emission results show that good crystal quality nano-diamond film has a threshold electric field of 3 V/mum, much lower than the typical threshold electric-field of diamond films grown using conventional gas mixture of hydrogen-methane, indicating that nano-diamond film is a good candidate for electron emitter material. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：948 / 951

页数：4

共 16 条

[1] SYNTHESIS OF DIAMOND FROM METHANE AND NITROGEN MIXTURE [J].

BADZIAN, A ;

BADZIAN, T ;

LEE, ST .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3432-3434

[2] THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS [J].

BERGMAN, L ;

MCCLURE, MT ;

GLASS, JT ;

NEMANICH, RJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (05) :3020-3027

[3] Mechanical properties of the 3D polymerized, sp2-sp3 amorphous, and diamond-plus-graphite nanocomposite carbon phases prepared from C60 under high pressure [J].

Brazhkin, VV ;

Lyapin, AG ;

Popova, SV ;

Klyuev, YA ;

Naletov, AM .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) :219-226

[4] CHARACTERIZATION OF FILAMENT-ASSISTED CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS USING RAMAN-SPECTROSCOPY [J].

BUCKLEY, RG ;

MOUSTAKAS, TD ;

LING, Y ;

VARON, J .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3595-3599

[5] Growth, characterization, optical and X-ray absorption studies of nano-crystalline diamond films [J].

Chen, LC ;

Wang, TY ;

Yang, JR ;

Chen, KH ;

Bhusari, DM ;

Chang, YK ;

Hsieh, HH ;

Pong, WF .

[6] PREPARATION OF SMOOTH AND NANOCRYSTALLINE DIAMOND FILMS [J].

ERZ, R ;

DOTTER, W ;

JUNG, K ;

EHRHARDT, H .

[7] DC-ARC PLASMA DEPOSITION OF SMOOTH NANOCRYSTALLINE DIAMOND FILMS [J].

KONOV, VI ;

SMOLIN, AA ;

RALCHENKO, VG ;

PIMENOV, SM ;

OBRAZTSOVA, ED ;

LOUBNIN, EN ;

METEV, SM ;

SEPOLD, G .

[8] Negative electron affinity mechanism for diamond surfaces [J].

Krainsky, IL ;

Asnin, VM .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2574-2576

[9] Nucleation and bulk film growth kinetics of nanocrystalline diamond prepared by microwave plasma-enhanced chemical vapor deposition on silicon substrates [J].

Lee, JC ;

Hong, BY ;

Messier, R ;

Collins, RW .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1716-1718

[10] Low field electron emission from nanoclustered carbon grown by cathodic arc [J].

Satyanarayana, BS ;

Robertson, J ;

Milne, WI .

← 1 2 →