Fundamental study of an electrostatic chuck for silicon wafer handling

被引:91
作者
Asano, K [1 ]
Hatakeyama, F [1 ]
Yatsuzuka, K [1 ]
机构
[1] Yamagata Univ, Dept Elect & Informat Engn, Yonezawa, Yamagata 9928510, Japan
关键词
dielectric thin film; electrostatic chuck; electrostatic force; holding system for silicon wafer; interdigitated electrodes system;
D O I
10.1109/TIA.2002.1003438
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Mechanical holding systems of a wafer might cause serious problems in the semiconductor industry. Electrostatic wafer handling might be one of the possible solutions for such problems. We have investigated an attractive force on a silicon wafer by using an electrostatic chuck which consists of interdigitated electrodes and a dielectric thin film. Electrostatic attractive force increases as the applied voltage increases, and with a thinner dielectric layer. With the narrower width and spacing of interdigitated electrodes, the stronger electrostatic force is obtained. When 1-mm width and spacing interdigitated electrodes and 50-mum-thick polymer film are used, the strongest force obtained was about 17 N in the vertical direction at 3.5 kV, for a 4-in silicon wafer. When dc high voltage is used, some residual force remains, even after the applied voltage is removed. This was overcome by using variable-frequency ac high voltage.
引用
收藏
页码:840 / 845
页数:6
相关论文
共 6 条
[1]  
Abe N., 1983, US Pat. No, Patent No. [4,384,918, 4384918]
[2]  
HARTSOUGH LD, 1993, SOLID STATE TECHNOL, P87
[3]  
HATAKEYAMA F, 1996, THESIS YAMAGATA U YO
[4]  
WACHTLER IJ, 1975, Patent No. 3916270
[5]   ELECTROSTATIC WAFER CHUCK FOR ELECTRON-BEAM MICROFABRICATION [J].
WARDLY, GA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1973, 44 (10) :1506-1509
[6]  
Watanabe T, 1992, J JPN CERAM SOC JPN, V100, P1