A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition

被引:28
作者
Osowski, ML
Panepucci, R
Adesida, I
Coleman, JJ
机构
[1] Microelectronics Laboratory, University of Illinois, Urban
基金
美国国家科学基金会;
关键词
distributed feedback lasers; gratings; quantum-well lasers; semiconductor lasers; strain;
D O I
10.1109/68.559375
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single growth step ridge waveguide InGaAs-GaAs distributed feedback (DFB) laser with second-order Ti surface gratings is described, The Ti gratings introduce a periodic variation of the loss in the cavity to promote single frequency emission, The device operates on single longitudinal and lateral modes, with a threshold current of 27.9 mA and more than 30 dB of side-mode suppression.
引用
收藏
页码:422 / 424
页数:3
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