ON THE LINEWIDTH ENHANCEMENT FACTOR IN SEMICONDUCTOR-LASERS

被引：14

作者：

OLOFSSON, L

BROWN, TG

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.103783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The linewidth enhancement factor-alpha is known to have an important impact on semiconductor laser frequency stability. We determine under what general circumstances the value of alpha for a semiconductor laser may depend upon the longitudinal laser structure. A longitudinal modulation of the modal refractive index is shown not to have any influence on alpha, while our results indicate that a longitudinal modulation of the modal gain such as would be used in a gain-coupled laser will in general change the linewidth enhancement factor.

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页码：2773 / 2775

页数：3

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