LINEWIDTH ENHANCEMENT FACTOR IN STRAINED QUANTUM-WELL LASERS

被引：28

作者：

DUTTA, NK

WYNN, J

SIVCO, DL

CHO, AY

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 23期

关键词：

D O I：

10.1063/1.102944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The linewidth enhancement factor α in an In0.2Ga 0.8As/GaAs strained-layer multiple quantum well (MQW) laser has been determined from the spontaneous emission spectra below threshold. The measured α at the lasing wavelength is found to be 1.0 compared to a value of 5 typically observed for InGaAsP/InP double-heterostructure lasers. The smaller α shows that single wavelength strained MQW lasers may have smaller chirp width under modulation and also smaller cw linewidth.

引用

页码：2293 / 2294

页数：2

共 7 条

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