A 970-NM STRAINED-LAYER INGAAS/GAALAS QUANTUM WELL LASER FOR PUMPING AN ERBIUM-DOPED OPTICAL FIBER AMPLIFIER

被引:70
作者
WU, MC
OLSSON, NA
SIVCO, D
CHO, AY
机构
关键词
D O I
10.1063/1.102837
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the performance of a 970 nm strained-layer InGaAs/GaAlAs quantum well laser and its application for pumping Er-doped optical fiber amplifiers. The laser was grown by molecular beam epitaxy and has three In 0.2Ga0.8As/GaAs quantum wells. For a 5-μm-wide and 400-μm-long ridge-waveguide laser, a cw threshold current of 20 mA and an external quantum efficiency of 0.28 mW/mA per facet were obtained. Maximum output power exceeds 32 mW/facet. With antireflection coating, even higher external quantum efficiency (0.40 mW/mA) was achieved, and more than 20 mW of power was coupled into a single mode fiber. Preliminary experiments of pumping the Er-doped fiber amplifier gave 15 dB of gain at 1.555 μm for a pump power of 14 mW into the Er fiber.
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页码:221 / 223
页数:3
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