Nanostructured porous silicon for gas sensor applications

被引：4

作者：

Di Francia, G ^{[1
]}

Della Noce, M ^{[1
]}

La Ferrara, V ^{[1
]}

Lancellotti, L ^{[1
]}

Morvillo, P ^{[1
]}

Quercia, L ^{[1
]}

机构：

[1] ENEA, CR, I-80055 Portici, Italy

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2002年 / 18卷 / 07期

关键词：

D O I：

10.1179/026708302225003848

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The response of two different types of nanostructured gas sensor to oxygen has been investigated. The first (optical) is based on the photoluminescence quenching effect of a porous silicon sample, the second on the changes of the electrical conductance v. environment of a porous silicon free standing membrane on an insulating neutral substrate. The response of both the devices to oxygen have been measured and compared. The optical based gas sensor exhibits a quenching following the Stern - Volmer model. The corresponding reactivity rate constant is found to depend on a characteristic nanodimension of the wire. The electrically operated sensor is more sensitive to oxygen and shows an opposite behavior if exposed to a reducing environment.

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页码：767 / 771

页数：5

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