Interface redox engineering of Cu(In,Ga)Se2 -: based solar cells:: oxygen, sodium, and chemical bath effects

被引:93
作者
Kronik, L
Rau, U
Guillemoles, JF
Braunger, D
Schock, HW
Cahen, D
机构
[1] Tel Aviv Univ, Dept Educ Phys, IL-69978 Tel Aviv, Israel
[2] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[3] Univ Stuttgart, Inst Phys Elekt, D-70589 Stuttgart, Germany
[4] ENSCP, Lab Electrochim, F-75005 Paris, France
关键词
CuInSe2; Cu(In; Ga)Se-2; oxygen; sodium; chemical bath;
D O I
10.1016/S0040-6090(99)00768-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The chemical effects of oxygenation of Cu(In,Ga)Se-2 (CIGS) interfaces are analyzed and are shown to involve passivation of Se deficiencies and Cu removal. The former effect is beneficial at grain boundaries, but detrimental at the CdS/CIGS interface. The latter effect is purely detrimental. Na and chemical bath deposition (CBD) treatments are shown to isolate the 'good' oxygenation effect from the 'bad' ones. Na is shown to promote oxygenation already before the deposition of the buffer and window layers, which allows a maximization of the benefits of Se deficiency passivation and a minimization of Cu removal. Next, the CBD of the CdS buffer layer restores the interface charge, due to creation of Cd-Cu interface donors and possibly a removal of O-Se interface accepters. This highlights the crucial role that interface redox engineering plays in optimizing the performance of CIGS-based solar cells. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:353 / 359
页数:7
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