Characterization of high dose Mn, Fe, and Ni implantation into p-GaN

被引:33
作者
Pearton, SJ [1 ]
Overberg, ME
Thaler, G
Abernathy, CR
Theodoropoulou, N
Hebard, AF
Chu, SNG
Wilson, RG
Zavada, JM
Polyakov, AY
Osinsky, AV
Norris, PE
Chow, PP
Wowchack, AM
Van Hove, JM
Park, YD
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Agere Syst, Murray Hill, NJ 07974 USA
[4] USA, Res Off, Res Triangle Pk, NC 27709 USA
[5] Inst Rare Met, Moscow, Russia
[6] Corning Appl Technol, Woburn, MA USA
[7] SVT Associates, Eden Prairie, MN 55344 USA
[8] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2002年 / 20卷 / 03期
关键词
D O I
10.1116/1.1465449
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The magnetization of p-GaN or p-AlGaN/GaN superlattices was measured after implantation with high doses (3-5 x 10(16) cm(-2)) of Mn, Fe, or Ni and subsequent annealing at 700-1000 degreesC. The samples showed ferromagnetic contributions below temperatures ranging from 190-250 K for Mn to 45-185 K for Ni and 80-250 K for Fe. The use of superlattices to enhance the hole concentration did not produce any change in ferromagnetic ordering temperature. No secondary phase formation was observed by x-ray diffraction, transmission electron microscopy, or selected area diffraction pattem analysis for the doses we employed. (C) 2002 American Vacuum Society.
引用
收藏
页码:721 / 724
页数:4
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