Microactuators based on ion implanted dielectric electroactive polymer (EAP) membranes

被引:64
作者
Dubois, Philippe [1 ]
Rosset, Samuel
Koster, Sander
Stauffer, Johann
Mikhailov, Serguei
Dadras, Massoud
de Rooij, Nico-F.
Shea, Herbert
机构
[1] Ecole Polytech Fed Lausanne, Microsyst Space Technol Lab, Lausanne, Switzerland
[2] Univ Groningen, Groningen, Netherlands
[3] CAFI, Le Locle, Switzerland
[4] Univ Neuchatel, IMT, Neuchatel, Switzerland
关键词
ion implantation; dielectric electroactive polymer; EAP; DEAP; dielectric elastomer actuator; DEA;
D O I
10.1016/j.sna.2005.11.069
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the first successfully microfabricated and tested ion implanted dielectric electroactive polymer (DEAP) actuators. Dielectric EAP (DEAP) actuators combine exceptionally high energy-density with large amplitude displacements [S. Ashley, Artificial muscles, Sci. Am. 289 (2003) 52-59: R. Pelrine. R. Kornbluh, J. Joseph, R. Heydt, Q. Pei, S. Chiba, High field deformation of elastomeric dielectrics for actuators, Mater. Sci. Eng. C 11 (2000) 89-100]. Scaling DEAPs down to the millimeter and micron scale requires patterning compliant electrodes on such a scale on the surfaces of the polymer. We used ion implantation to make the surfaces of the polymer locally conducting. Implanting the compliant electrodes solves the problem of microfabricating patterned electrodes whose elasticity is close to that of the insulating elastomer, thus avoiding the deposition of metal electrodes on the polymer which leads to significant stiffening of the membrane [A. Pimpin, Y. Suzuki, N. Kasagi, Micro electrostrictive actuator with metal compliant electrodes for flow control applications, in: MEMS 04, Maastricht, The Netherlands, 25-29 January, 2004, pp. 478-481]. Several techniques based on ion implantation for chip level and wafer level fabrication are presented. Ion implanted DEAP membranes were both simulated (FEM) and characterized. We report measurements on an actuator consisting of a 30-mu m-thick ion implanted PDMS membrane bonded to a silicon chip into which a cavity had been etched. We measured 110 mu m vertical displacements for a 0.72 mm(2) membrane. achieving for the first time the same percent displacement in microscopic DEAPs as in macroscopic devices. These observations show that ion implantation allows the patterning of electrodes on PDMS membranes with negligible increase in stiffness. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 154
页数:8
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