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Silicon-based nanoelectronic field-effect pH sensor with local gate control
被引:85
作者:
Chen, Yu
Wang, Xihua
Erramilli, Shyamsunder
Mohanty, Pritiraj
Kalinowski, Agnieszka
机构:
[1] Boston Univ, Dept Phys, Boston, MA 02215 USA
[2] Carnegie Mellon Univ, Sch Med, Pittsburgh, PA 15261 USA
[3] Univ Pittsburgh, Pittsburgh, PA 15261 USA
基金:
美国国家科学基金会;
关键词:
CARBON NANOTUBES;
D O I:
10.1063/1.2392828
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The authors demonstrate the operation of a nanoscale field-effect pH sensor engineered from a functionalized silicon nanowire. With this nanofabricated pH sensor, the change in the hydrogen ion concentration or the pH value of a solution can be detected by the corresponding change in the nanowire differential conductance with a resolution of +/- 5nS/pH. Fabrication of selective side gates on the nanowire sensor allows field-effect control of the surface charge on the nanowire by controlling the accumulation of charge carriers with the side-gate voltage. A simple physical model is used to analyze the observed data and to quantify the dependence of the conductance on pH. The development of a nanoscale sensor with physically engineered gates offers the possibility of highly parallel labeling and detection of chemical and biological molecules with selective control of individual array elements.
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