Optical phonons in GaN/AlN quantum dots: leaky modes

被引：12

作者：

Romanov, D

Mitin, V

Stroscio, M

机构：

[1] Wayne State Univ, Dept ECE, Detroit, MI 48202 USA

[2] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 316卷

关键词：

quantum dots; GaN/AlN; optical phonons; leaky states;

D O I：

10.1016/S0921-4526(02)00507-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Surface polar vibrations of a GaN quantum dot in AlN matrix are analyzed in the framework of the macroscopic dielectric continuum model. The conditions are found for existence of surface modes on a quantum dot of oblate spheroidal form. These conditions determine continuum frequency regions rather than quantized frequencies. The found modes are peculiar leaky states. They can provide effective energy relaxation of the confined electrons. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：359 / 361

页数：3