Dispersion of polar optical phonons in wurtzite quantum wells

被引:166
作者
Komirenko, SM [1 ]
Kim, KW
Stroscio, MA
Dutta, M
机构
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[2] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词
D O I
10.1103/PhysRevB.59.5013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dispersion relations for polar optical phonon modes in wurtzite quantum wells (QW's) are obtained in the framework of the dielectric continuum model. It is found that anisotropy of the dielectric medium causes a number of qualitative peculiarities in the phonon spectra. Among these are the absence of the proper confinement for the oscillatory waves located in the QW, inversion of the order of symmetric and antisymmetric quasiconfined optical modes, formation of the finite energy intervals where such confined modes-which are found to be dispersive-can exist, penetration of the half-space phonons into the QW, etc. Some additional peculiarities, such as appearance of propagating modes, strong dispersion of long-wavelength half-space modes, and reduction of the number of interface modes, arise as a result of overlapping characteristic phonon frequencies of the surrounding material and the material of QW. Predicted phonon behavior leads to the conclusion that dependence of dielectric properties of ternary-binary low-dimensional wurtzite heterostructures on composition can serve as a powerful tool for the purposes of phonon spectrum engineering. In order to illustrate these results, the optical phonon spectra are calculated fur an Al0.15Ga0.85N/GaN/Al0.15Ga0.85N an AlN/GaN/AlN QW, and for a GaN dielectric slab. [S0163-1829(99)05907-X].
引用
收藏
页码:5013 / 5020
页数:8
相关论文
共 11 条
  • [1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER
    AMANO, H
    SAWAKI, N
    AKASAKI, I
    TOYODA, Y
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 353 - 355
  • [2] Resonant Raman scattering in GaN/(AlGa)N single quantum wells
    Behr, D
    Niebuhr, R
    Wagner, J
    Bachem, KH
    Kaufmann, U
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (03) : 363 - 365
  • [3] Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1-xAlxN solid solutions
    Demangeot, F
    Groenen, J
    Frandon, J
    Renucci, MA
    Briot, O
    Clur, S
    Aulombard, RL
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2674 - 2676
  • [4] Demangeot F, 1997, MRS INTERNET J N S R, V2, part. no.
  • [5] RAMAN-SCATTERING IN ALXGA1-XN ALLOYS
    HAYASHI, K
    ITOH, K
    SAWAKI, N
    AKASAKI, I
    [J]. SOLID STATE COMMUNICATIONS, 1991, 77 (02) : 115 - 118
  • [6] Optical-phonon confinement and scattering in wurtzite heterostructures
    Lee, BC
    Kim, KW
    Stroscio, MA
    Dutta, M
    [J]. PHYSICAL REVIEW B, 1998, 58 (08): : 4860 - 4865
  • [7] Electron-optical-phonon scattering in wurtzite crystals
    Lee, BC
    Kim, KW
    Dutta, M
    Stroscio, MA
    [J]. PHYSICAL REVIEW B, 1997, 56 (03): : 997 - 1000
  • [8] RAMAN EFFECT IN CRYSTALS
    LOUDON, R
    [J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 423 - &
  • [9] ELECTRON OPTICAL-PHONON INTERACTION IN SINGLE AND DOUBLE HETEROSTRUCTURES
    MORI, N
    ANDO, T
    [J]. PHYSICAL REVIEW B, 1989, 40 (09): : 6175 - 6188
  • [10] InGaN-based multi-quantum-well-structure laser diodes
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Kiyoku, H
    Sugimoto, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B): : L74 - L76