Observation of step configuration conversion on single-domain Si(001) 1x2 surface by scanning tunneling microscope

被引：1

作者：

Zhou, JM ^{[1
]}

Lin, N ^{[1
]}

Guo, LW ^{[1
]}

Zhang, MH ^{[1
]}

Huang, Q ^{[1
]}

Cue, N ^{[1
]}

Chen, T ^{[1
]}

机构：

[1] HONG KONG UNIV SCI & TECHNOL,DEPT PHYS,KOWLOON,HONG KONG

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed a conversion of step configuration of 3.5 degrees miscut Si(001) surface after depositing several monolayers of Ge by using a scanning tunneling microscope. For a 3.5 degrees miscut Si(001) surface, terraces are spaced by double-atom height steps and all dimer rows, either on the upper terrace or on the lower terrace of a step, are normal to the step edge, defined as single-domain (1 x 2) surface. After depositing 2 ML of Ge, the surface is still single domain, but dimer rows have changed their direction, running parallel to the step edge and single domain (2 x 1) appeared. The reason for such conversion is attributed to the strain that existed on the epilayer of Ge. (C) 1996 American Institute of Physics.

引用

页码：3336 / 3338

页数：3

共 15 条

[1] INSITU RHEED OBSERVATION OF SELECTIVE DIMINUTION AT SI(001)-2 X-1 SUPERLATTICE SPOTS DURING MBE [J].

AIZAKI, N ;

TATSUMI, T .

SURFACE SCIENCE, 1986, 174 (1-3) :658-665

[2] SPONTANEOUS FORMATION OF STRESS DOMAINS ON CRYSTAL-SURFACES [J].

ALERHAND, OL ;

VANDERBILT, D ;

MEADE, RD ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1988, 61 (17) :1973-1976

[3] FINITE-TEMPERATURE PHASE-DIAGRAM OF VICINAL SI(100) SURFACES [J].

ALERHAND, OL ;

BERKER, AN ;

JOANNOPOULOS, JD ;

VANDERBILT, D ;

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1990, 64 (20) :2406-2409

[4] 2XN SURFACE-STRUCTURE OF SIGE LAYERS DEPOSITED ON SI(100) [J].

BUTZ, R ;

KAMPERS, S .

APPLIED PHYSICS LETTERS, 1992, 61 (11) :1307-1309

[5] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[6] VACANCY-VACANCY INTERACTION ON GE-COVERED SI(001) [J].

CHEN, X ;

WU, F ;

ZHANG, ZY ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1994, 73 (06) :850-853

[7] SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

HOEVEN, AJ ;

LENSSINCK, JM ;

DIJKKAMP, D ;

VANLOENEN, EJ ;

DIELEMAN, J .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1830-1832

[8] LAYER-BY-LAYER GROWTH OF GERMANIUM ON SI(100) - STRAIN-INDUCED MORPHOLOGY AND THE INFLUENCE OF SURFACTANTS [J].

KOHLER, U ;

JUSKO, O ;

MULLER, B ;

HORNVONHOEGEN, M ;

POOK, M .

ULTRAMICROSCOPY, 1992, 42 :832-837

[9] SI(100) SURFACE UNDER AN EXTERNALLY APPLIED STRESS [J].

MEN, FK ;

PACKARD, WE ;

WEBB, MB .

PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2469-2471

[10]

SAKAMOTO K, 1988, P 2 INT S SIMBE HON

← 1 2 →