Supersonic jet epitaxy of aluminum nitride on silicon (100)

被引：20

作者：

Brown, KA ^{[1
]}

Ustin, SA ^{[1
]}

Lauhon, L ^{[1
]}

Ho, W ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.362431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720 degrees C greater than or equal to T-s greater than or equal to 620 degrees C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)(3)] and ammonia (NH3). The maximum growth rate obtained was 0.1 mu m/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2 theta full widths at half-maxima between 0.20 degrees and 0.35 degrees for the AlN (0002) peak. (C) 1996 American Institute of Physics.

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页码：7667 / 7671

页数：5

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