Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity

被引:103
作者
Biyikli, N [1 ]
Aytur, O
Kimukin, I
Tut, T
Ozbay, E
机构
[1] Bilkent Univ, Dept Elect Engn & Elect, TR-06533 Bilkent, Turkey
[2] Bilkent Univ, Dept Phys, TR-06533 Bilkent, Turkey
关键词
D O I
10.1063/1.1516856
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible fabrication process. True solar-blind operation with a cutoff wavelength of similar to274 nm was achieved with Al(x)Ga(1-x)N (x=0.38) absorption layer. The solar-blind detectors exhibited <1.8 nA/cm(2) dark current density in the 0-25 V reverse bias regime, and a maximum quantum efficiency of 42% around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6x10(12) cm Hz(1/2)/W, and the detector noise was 1/f limited with a noise power density less than 3x10(-29) A(2)/Hz at 10 kHz. (C) 2002 American Institute of Physics.
引用
收藏
页码:3272 / 3274
页数:3
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