Back illuminated AlGaN solar-blind photodetectors

被引:88
作者
Lambert, DJH [1 ]
Wong, MM [1 ]
Chowdhury, U [1 ]
Collins, C [1 ]
Li, T [1 ]
Kwon, HK [1 ]
Shelton, BS [1 ]
Zhu, TG [1 ]
Campbell, JC [1 ]
Dupuis, RD [1 ]
机构
[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA
关键词
D O I
10.1063/1.1311821
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the growth, fabrication, and characterization of AlxGa1-xN (0 less than or equal to x less than or equal to 0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (lambda similar to 280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers. (C) 2000 American Institute of Physics. [S0003-6951(00)05438-3].
引用
收藏
页码:1900 / 1902
页数:3
相关论文
共 13 条
  • [1] GaN avalanche photodiodes
    Carrano, JC
    Lambert, DJH
    Eiting, CJ
    Collins, CJ
    Li, T
    Wang, S
    Yang, B
    Beck, AL
    Dupuis, RD
    Campbell, JC
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (07) : 924 - 926
  • [2] Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN
    Carrano, JC
    Li, T
    Grudowski, PA
    Eiting, CJ
    Dupuis, RD
    Campbell, JC
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6148 - 6160
  • [3] Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode
    Collins, CJ
    Li, T
    Beck, AL
    Dupuis, RD
    Campbell, JC
    Carrano, JC
    Schurman, MJ
    Ferguson, IA
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2138 - 2140
  • [4] Growth of low resistivity p-type GaN by metal organic chemical vapour deposition
    Eiting, CJ
    Grudowski, PA
    Dupuis, RD
    [J]. ELECTRONICS LETTERS, 1997, 33 (23) : 1987 - 1989
  • [5] GOETZ W, UNPUB
  • [6] HAN J, 1999, MRS INTERNET J NITRI
  • [7] Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode
    Li, T
    Beck, AL
    Collins, C
    Dupuis, RD
    Campbell, JC
    Carrano, JC
    Schurman, MJ
    Ferguson, IA
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (16) : 2421 - 2423
  • [8] GaN avalanche photodiodes grown by hydride vapor-phase epitaxy
    McIntosh, KA
    Molnar, RJ
    Mahoney, LJ
    Lightfoot, A
    Geis, MW
    Molvar, KM
    Melngailis, I
    Aggarwal, RL
    Goodhue, WD
    Choi, SS
    Spears, DL
    Verghese, S
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3485 - 3487
  • [9] AlxGa1-xN:Si Schottky barrier photodiodes with fast response and high detectivity
    Monroy, E
    Calle, F
    Munoz, E
    Omnes, F
    Gibart, P
    Munoz, JA
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2146 - 2148
  • [10] AlGaN metal-semiconductor-metal photodiodes
    Monroy, E
    Calle, F
    Muñoz, E
    Omnès, F
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3401 - 3403