Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors

Preliminary measurements of positive and negative bias stress and radiation effects in poly-three-hexylthiophene based field effect transistors are reported. Radiation up to 0.5 Mrad (SiO2) is found to have little effect on channel carrier mobility though bias stressing does. A strong positive bias stress induced positive threshold voltage shift is suppressed when devices are simultaneously irradiated. There is no evidence for significant radiation effects in the organic semiconductor. Recovery effects are observed following removal of bias stress and radiation. (C) 2006 American Institute of Physics.