The temperature dependence of the conduction current in Ba0.5Sr0.5TiO3 thin-film capacitors for memory device applications

被引：52

作者：

Lin, YB ^{[1
]}

Lee, JYM ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 04期

关键词：

D O I：

10.1063/1.372100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the current-voltage characteristics of Ba0.5Sr0.5TiO3 (BST) thin-film capacitors was studied from 300 to 433 K. An Au/BST/Pt/Ti/SiO2/Si structure was used. The BST films were deposited by rf magnetron sputtering. The conduction current was dominated by Schottky emission at room temperature and by Poole-Frenkel emission above 403 K. The dominant conduction mechanism changed from Schottky emission to Poole-Frenkel emission in the temperature range from 373 to 403 K. The BST/Pt and the BST/Au Schottky barrier heights were found to be 0.88 and 0.72 eV, respectively. The trap energy level in BST was 0.83 eV. (C) 2000 American Institute of Physics. [S0021-8979(00)08204-9].

引用

页码：1841 / 1843

页数：3

共 16 条

[1]

Cheol Seong Hwang, 1996, Integrated Ferroelectrics, V13, P157, DOI 10.1080/10584589608013090

[2] Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].