The heteroisomeric diode

被引：81

作者：

Caruso, AN

Billa, RB

Balaz, S

Brand, JI

Dowben, PA

机构：

[1] Univ Nebraska, Behlen Lab Phys, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Behlen Lab Phys, Ctr Mat Res & Anal, Lincoln, NE 68588 USA

[3] Univ Nebraska, Coll Engn & Technol, Lincoln, NE 68588 USA

[4] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2004年 / 16卷 / 10期

关键词：

D O I：

10.1088/0953-8984/16/10/L04

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have fabricated a new class of diode from two different polytypes of boron carbide. Diodes were fabricated by chemical vapour deposition from two different isomers of closo-dicarbadodecaborane: closo-1,2-dicarbadodecaborane (orthocarborane, C2B10H12) and closo-1,7-dicarbadodecaborane (metacarbo-rane, C2B10H12), differing only by the carbon placement within the icosahe-dral cage. We find that the electronic structure (molecular orbitals) of these two isomer molecules and the resulting decomposition reflect the tendency of metacarborane to form an n-type semiconductor while orthocarborane is an effective source compound for a slightly p-type semiconducting boron carbide. The diodes of this novel class are effective solid state neutron detectors, and have a number of unique applications.

引用

收藏

页码：L139 / L146

页数：8

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