HETEROJUNCTION FABRICATION BY SELECTIVE-AREA CHEMICAL-VAPOR-DEPOSITION INDUCED BY SYNCHROTRON-RADIATION

被引：42

作者：

BYUN, DG

HWANG, SD

DOWBEN, PA

PERKINS, FK

FILIPS, F

IANNO, NJ

机构：

[1] UNIV NEBRASKA,CTR MAT RES & ANAL,DEPT PHYS,LINCOLN,NE 68588

[2] USN,RES LAB,DIV ELECTR SCI TECHNOL,WASHINGTON,DC 20375

[3] UNIV NEBRASKA,CTR MAT RES & ANAL,DEPT ELECT ENGN,LINCOLN,NE 68588

[4] SYRACUSE UNIV,SOLID STATE SCI & TECHNOL PROGRAM,SYRACUSE,NY 13244

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 15期

关键词：

D O I：

10.1063/1.111758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a B5C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that ''real-time'' projection lithography (selective area deposition) of boron-carbide devices is possible.

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页码：1968 / 1970

页数：3

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