SYNCHROTRON-RADIATION-INDUCED SURFACE NITRIDATION OF SILICON AT ROOM-TEMPERATURE

[1] ADAMS AC, 1983, VLSI TECHNOLOGY

[2] BOSZO F, 1986, PHYS REV LETT, V57, P1185

[3] MODIFICATION OF THE GERMANIUM OXIDATION PROCESS BY ALUMINUM ADATOMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 619 - 621

[4] THERMAL NITRIDATION OF SILICON - AN XPS AND LEED INVESTIGATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 316 - 319

[5] MARGARITONDO G, 1985, METHODS EXPT PHYSICS, V22, pCH3

[6] WILSON AD, 1985, P SOC PHOTO-OPT INST, V537, P85, DOI 10.1117/12.947489

[7] 1986, ADV PROCESSING ELECT

[1] ADAMS AC, 1983, VLSI TECHNOLOGY

[2] BOSZO F, 1986, PHYS REV LETT, V57, P1185

[3] MODIFICATION OF THE GERMANIUM OXIDATION PROCESS BY ALUMINUM ADATOMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 619 - 621

[4] THERMAL NITRIDATION OF SILICON - AN XPS AND LEED INVESTIGATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 316 - 319

[5] MARGARITONDO G, 1985, METHODS EXPT PHYSICS, V22, pCH3

[6] WILSON AD, 1985, P SOC PHOTO-OPT INST, V537, P85, DOI 10.1117/12.947489

[7] 1986, ADV PROCESSING ELECT