MODIFICATION OF THE GERMANIUM OXIDATION PROCESS BY ALUMINUM ADATOMS

被引：29

作者：

KATNANI, AD

PERFETTI, P

ZHAO, TX

MARGARITONDO, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：619 / 621

页数：3

共 14 条

[1] SURFACE RESONANCES AND OXIDATION OF SINGLE-CRYSTAL ALUMINUM [J].

BACHRACH, RZ ;

FLODSTROM, SA ;

BAUER, RS ;

HASTROM, SBM ;

CHADI, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :488-493

[2]

CROS A, 1981, SURF SCI, V103, pL109, DOI 10.1016/0039-6028(81)90094-7

[3] CHEMISORPTION OF O AND H ON FREE-ELECTRON-LIKE METALS AL AND MG STUDIED BY PHOTOELECTRON-SPECTROSCOPY [J].

FLODSTROM, SA ;

PETERSSON, LG ;

HAGSTROM, SBM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :280-282

[4] MULTIPLE OXIDATION-STATES OF AL OBSERVED BY PHOTOELECTRON-SPECTROSCOPY OF SUBSTRATE CORE LEVEL SHIFTS [J].

FLODSTROM, SA ;

BACHRACH, RZ ;

BAUER, RS ;

HAGSTROM, SBM .

PHYSICAL REVIEW LETTERS, 1976, 37 (19) :1282-1285

[5] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS [J].

GARNER, CM ;

LINDAU, I ;

MILLER, JN ;

PIANETTA, P ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :372-375

[6] PEROXY RADICAL MODEL FOR CHEMISORPTION OF O-2 ONTO SILICON SURFACES [J].

GODDARD, WA ;

REDONDO, A ;

MCGILL, TC .

SOLID STATE COMMUNICATIONS, 1976, 18 (08) :981-984

[7] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].

IBACH, H ;

HORN, K ;

DORN, R ;

LUTH, H .

SURFACE SCIENCE, 1973, 38 (02) :433-454

[8] SURFACE SPECTROSCOPY OF SCHOTTKY-BARRIER FORMATION ON SI(111) 7X7 - PHOTOEMISSION STUDIES OF FILLED SURFACE-STATES AND BAND BENDING [J].

MARGARITONDO, G ;

ROWE, JE ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1976, 14 (12) :5396-5403

[9] OXIDATION OF SILICON SURFACES [J].

REDONDO, A ;

GODDARD, WA ;

SWARTS, CA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :498-501

[10] PHOTOEMISSION AND ELECTRON-ENERGY LOSS SPECTROSCOPY OF GEO2 AND SIO2 [J].

ROWE, JE .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :576-578

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