OXIDATION OF SILICON SURFACES

被引：100

作者：

REDONDO, A ^{[1
]}

GODDARD, WA ^{[1
]}

SWARTS, CA ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,HARRY G STEELE LAB APPL PHYS & ELECT ENGN,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：498 / 501

页数：4

共 26 条

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[7] GODDARD WA, UNPUBLISHED
[8] LOCAL ATOMIC AND ELECTRONIC-STRUCTURE OF OXIDE-GAAS AND SIO2-SI INTERFACES USING HIGH-RESOLUTION XPS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1443 - 1453
[9] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
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[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[10] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.
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[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454

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