PEROXY RADICAL MODEL FOR CHEMISORPTION OF O-2 ONTO SILICON SURFACES

被引：88

作者：

GODDARD, WA

REDONDO, A

MCGILL, TC

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

[2] CALTECH,STEELE LAB ELECT SCI,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 08期

关键词：

D O I：

10.1016/0038-1098(76)91221-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：981 / 984

页数：4

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