THERMAL NITRIDATION OF SILICON - AN XPS AND LEED INVESTIGATION

被引：109

作者：

MAILLOT, C

ROULET, H

DUFOUR, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.582816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：316 / 319

页数：4

共 18 条

[1] STRUCTURAL EVOLUTION OF VERY THIN SILICON-OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN [J].

AGIUS, B ;

RIGO, S ;

ROCHET, F ;

FROMENT, M ;

MAILLOT, C ;

ROULET, H ;

DUFOUR, G .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :48-50

[2] 7ICROANALYSIS BY DIRECT OBSERVATION OF NUCLEAR REACTIONS USING A 2 MEV VAN-DE-GRAAFF [J].

AMSEL, G ;

NADAI, JP ;

DARTEMAR.E ;

DAVID, D ;

GIRARD, E ;

MOULIN, J .

NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (04) :481-&

[3] COMPARISON OF X-RAY INDUCED AND ELECTRON-IMPACT INDUCED PHOTOELECTRON AND AUGER-SPECTRA - CO ADSORPTION ON MO [J].

BARRIE, A ;

BRUNDLE, CR .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :321-338

[4] MULTIPLE SCATTERING VERSUS SUPERSTRUCTURES IN LOW ENERGY ELECTRON DIFFRACTION [J].

BAUER, E .

SURFACE SCIENCE, 1967, 7 (03) :351-&

[5] OXYGEN INTERACTION WITH CLEAN ALUMINUM AND MAGNESIUM FILMS INVESTIGATED BY SYNCHROTRON-RADIATION-INDUCED PHOTOEMISSION [J].

FLODSTROM, SA ;

MARTINSON, CWB ;

KALKOFFEN, G ;

KUNZ, C .

MATERIALS SCIENCE AND ENGINEERING, 1980, 42 (1-2) :31-37

[6]

GRUNTHANER FJ, 1979, PHYS REV LETT, V43, P1693

[7]

HARBRAKEN FHP, 1982, J APPL PHYS, V53, P404

[8]

HARBRAKEN FHP, 1982, J APPL PHYS, V53, P6996

[9] STUDY OF NITRIDATION OF SILICON SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION AND AUGE ELECTRON SPECTROSCOPY [J].

HECKINGBOTTOM, R ;

WOOD, PR .

SURFACE SCIENCE, 1973, 36 (02) :594-605

[10] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J].

HOLLINGER, G .

APPLIED SURFACE SCIENCE, 1981, 8 (03) :318-336

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