Improved electrical properties of germanium MOS capacitors with gate dielectric grown in Wet-NO ambient

被引：40

作者：

Xu, J. P. ^{[1
]}

Lai, P. T.

Li, C. X.

Zou, X.

Chan, C. L.

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 06期

基金：

中国国家自然科学基金;

关键词：

GeOx interlayer; Ge MOS capacitors; GeON; wet-NO oxidation;

D O I：

10.1109/LED.2006.874124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wet-NO oxidation with or without wet NH3 pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOx interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeOx in water-containing atmosphere.

引用

页码：439 / 441

页数：3

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