Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

被引：33

作者：

Rezek, B

Nebel, CE

Stutzmann, M

机构：

[1] AS CR, Inst Phys, Prague, Czech Republic

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10A期

关键词：

silicon; amorphous; microcrystalline; polycrystalline; thin films; laser crystallization; interference; superlateral growth; AFM;

D O I：

10.1143/JJAP.38.L1083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed interference laser crystallization of amorphous silicon has been applied to produce polycrystalline silicon thin films with grain sizes exceeding 5 mu m. It has been achieved by shifting the samples through the interference pattern, with steps of typical 100 nm width. Grain sizes have been investigated by atomic force microscopy (AFM). The grains show quadratic shapes with a typical length of the applied interference period (5 Irm) and width around 1.5-2.5 mu m.

引用

页码：L1083 / L1084

页数：2

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