Preparation of InN nanocrystals by solvo-thermal method

被引：48

作者：

Bai, YJ

Liu, ZG

Xu, XG

Cui, DL ^{[1
]}

Hao, XP

Feng, X

Wang, QL

机构：

[1] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[2] Shandong Univ Sci & Technol, Dept Mech, Jinan 250031, Peoples R China

[3] Shandong Univ, Inst Chem & Chem Engn, Jinan 250100, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 1-2期

基金：

中国国家自然科学基金; 中国博士后科学基金;

关键词：

nanostructures; X-ray diffraction; nitrides; semiconducting indium compounds;

D O I：

10.1016/S0022-0248(02)01292-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Indium nitride (InN) nanocrystals were successfully prepared by the reaction of InCl3 and Li3N at 250degreesC with xylene as the solvent. X-ray powder diffraction and TEM observation showed that the two phases of cubic InN and hexagonal InN coexist in the nanocrystals prepared by the solvo-thermal method. (C) 2002 Published by Elsevier Science B.V.

引用

页码：189 / 192

页数：4

共 16 条

[1] CARBOTHERMAL SYNTHESIS OF ALUMINUM NITRIDE USING SUCROSE [J].