Study on polymeric neutral species in high-density fluorocarbon plasmas

被引:50
作者
Teii, K
Hori, M
Ito, M
Goto, T
Ishii, N
机构
[1] Nagoya Univ, Dept Quantum Engn, Grad Sch, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Fac Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Tokyo Electron Ltd, Cent Res Lab, Yodogawa Ku, Osaka 5320003, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 01期
关键词
D O I
10.1116/1.582150
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Production and extinction processes of polymeric neutral species (CmFn;m greater than or equal to 2) in electron cyclotron resonance C4F8 and CF4 plasmas have been studied by using a quadrupole mass spectrometer (QMS) employing low-energy electron attachment technique. This technique allows the detection of electronegative CmFn species as negative ions by scanning the attaching electron energy in the QMS typically in the range of 0-10 eV. in addition to the most abundant F- and CF3- signals resulting from dissociative attachment to various fluorocarbon species, pronounced attachment resonances of negative ions corresponding to the series of CmF2m+/-1- such as C3F7- C4F9- and C5F9- were primarily observed especially at low microwave powers and high pressures. The C4F8 plasma contained a large amount of polymeric species and a high fraction of reactive F-stripped species as compared to the CF4 plasma, providing evidence of a high potential of gas phase and surface polymerization in a low F/C ratio plasma. The amount and composition of polymeric species were examined by varying gas residence time and diluted hydrogen or argon concentration. At 20 mTorr, the overall amount of polymeric species was suppressed by enhanced gas flow with decreasing residence time, while a fraction of F-stripped species was increased. The amount of polymeric species was also suppressed with increasing diluted hydrogen, and the different behavior in the two plasmas was interpreted as the result of interactions between H atoms and polymeric species. The results provide insights into the kinetics and chemical activity of polymeric species in a high-density plasma as a practical etching source. (C) 2000 American Vacuum Society. [S0734-2101(00)04201-9].
引用
收藏
页码:1 / 9
页数:9
相关论文
共 31 条
[1]   CFx radical production and loss in a CF4 reactive ion etching plasma:: Fluorine rich conditions [J].
Booth, JP ;
Cunge, G ;
Chabert, P ;
Sadeghi, N .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3097-3107
[2]   Surface interactions of CF2 radicals during deposition of amorphous fluorocarbon films from CHF3 plasmas [J].
Capps, NE ;
Mackie, NM ;
Fisher, ER .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :4736-4743
[3]   ELECTRON-ATTACHMENT TO PERFLUOROCARBON COMPOUNDS .1. C4F6,2-C4F6,1,3-C4F6,C-C4F8 AND 2-C4F8 [J].
CHRISTODOULIDES, AA ;
CHRISTOPHOROU, LG ;
PAI, RY ;
TUNG, CM .
JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (03) :1156-1168
[4]  
Christophorou L. G, 1984, ELECT MOL INTERACTIO
[5]   INSITU AUGER-ELECTRON SPECTROSCOPY OF SI AND SIO2 SURFACES PLASMA ETCHED IN CF4-H2 GLOW-DISCHARGES [J].
COBURN, JW .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5210-5213
[6]   CF2 production and loss mechanisms in fluorocarbon discharges:: Fluorine-poor conditions and polymerization [J].
Cunge, G ;
Booth, JP .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :3952-3959
[7]   POPULATIONS IN THE METASTABLE AND THE RESONANCE LEVELS OF ARGON AND STEPWISE IONIZATION EFFECTS IN A LOW-PRESSURE ARGON POSITIVE-COLUMN [J].
FERREIRA, CM ;
LOUREIRO, J ;
RICARD, A .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :82-90
[8]   Effects of wall recombination on the etch rate and plasma composition of an etch reactor [J].
Font, GI ;
Boyd, ID ;
Balakrishnan, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (04) :2057-2064
[9]   Production and destruction of CFx radicals in radio-frequency fluorocarbon plasmas [J].
Haverlag, M ;
Stoffels, WW ;
Stoffels, E ;
Kroesen, GMW ;
deHoog, FJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02) :384-390
[10]   DRASTIC CHANGE IN CF-2 AND CF-3 KINETICS INDUCED BY HYDROGEN ADDITION INTO CF-4 ETCHING PLASMA [J].
HIKOSAKA, Y ;
TOYODA, H ;
SUGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (5A) :L690-L693