Surface interactions of CF2 radicals during deposition of amorphous fluorocarbon films from CHF3 plasmas

被引：70

作者：

Capps, NE ^{[1
]}

Mackie, NM ^{[1
]}

Fisher, ER ^{[1
]}

机构：

[1] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.368716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface reactivities for CF2 radicals formed in a CHF3 plasma molecular beam are measured during film deposition on a variety of substrates. The imaging of radicals interacting with surfaces (IRIS) technique was used to collect spatially resolved laser-induced fluorescence (LIF) images of CF2 radicals interacting with SiO2, Si3N4, Si, 304 stainless steel, and system 8 photoresist substrates. Films deposited during IRIS experiments were characterized using x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy and were found to be nearly identical in composition on all substrates. Simulation of LIF cross-sectional data shows high scattering coefficients for CF2 radicals on all substrates. These extremely large scattering coefficients (>1.0) indicate that CF2 molecules are generated through plasma interactions with the substrate. Possible CF, surface generation mechanisms an discussed, with consideration of CF and ion bombardment contributions to the generation of CF2. (C) 1998 American Institute of Physics. [S0021-8979(98)07721-4].

引用

页码：4736 / 4743

页数：8

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