PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 USING NOVEL ALKOXYSILANE PRECURSORS

被引：81

作者：

BOGART, KHA ^{[1
]}

DALLESKA, NF ^{[1
]}

BOGART, GR ^{[1
]}

FISHER, ER ^{[1
]}

机构：

[1] BIOSTAR INC, BOULDER, CO 80301 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.579382

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An inductively coupled rf plasma reactor was used to deposit SiO2 films on silicon and NaCl substrates from TEOS and three novel alkoxysilanes; TriEOS, TMOS and TriMOS. Films from all of the alkoxysilanes exhibited FTIR spectra and refractive indices similar to SiO2, and deposition rate were fast for TEOS. The amount of hydrocarbon incorporation in the films decreased with decreasing alkane substituent. Only the films deposited with triakoxysilanes showed significant amounts of Si-H bonding in their FTIR spectra. Finally, the methoxysilanes gave films with a greater SiO/CH3 ratio only at a slower deposition rate.

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页码：476 / 480

页数：5

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